This study investigates the effect of rest time (Tr) during the electrochemical anodization of n-type (100) silicon in hydrofluoric acid-based solutions, with the objective of tuning the morphological, structural, and surface properties of macroporous silicon (MPSi). Anodization was carried out at a constant current density of 10 mA/cm(2) under white light illumination for 20 minutes. Rest periods of 0, 20, 40, 60, and 80 seconds were introduced between etching intervals to examine their influence on pore development. Morphological analysis using Field-Emission Scanning Electron Microscopy (FE-SEM) revealed that Tr significantly affects pore shape and distribution. The sample with a 40-second rest time exhibited the most regular and circular pores, with the highest porosity (72%) and largest average pore diameter (similar to 5.05 mu m). Beyond this optimal point, longer rest times led to irregular morphologies and reduced porosity. Structural characterization via X-ray Diffraction (XRD) confirmed the preservation of the silicon crystal structure, with minor variations in crystallite size. Contact angle measurements demonstrated that surface wettability is also Tr-dependent, with the lowest contact angle (similar to 43 degrees) observed at Tr = 40 s, indicating enhanced hydrophilicity. The improvement in pore uniformity and surface properties is attributed to the enhanced removal of hydrogen bubbles and better electrolyte renewal during rest periods. These results underscore the importance of temporal modulation in anodization processes and highlight rest time as a critical parameter for optimizing MPSi for applications in sensors, biomedical interfaces, and optoelectronic devices.