In this work, the Al/(S:DLC)/p-Si/Au Schottky structures were fabricated, and the real and imaginary parts of complex -permittivity ( e* ), complex electric -modulus ( M* ), complex -impedance ( Z* ), loss -tangent ( & ), electricalconductivity ( a ac ), and phase -angle ( 9 ) were investigated in the wide -frequency -range of 2 kHz -2 MHz between - 3.0V/4.0V. All these -factors were found to be heavily dependent on frequency and voltage because of the surface states ( N ss ), Maxwell -Wagner polarization, and interlayer. The voltage -dependent profile of tan & and M '' exhibits a significant shift in peak location towards forward -bias voltages as frequency increases due to the relaxation process of the N ss and dipole polarization. The e ' was found to be 571.81 (at 2 kHz) and 59.72 (at 1 MHz). The value of e ' , even at 2 kHz, is about 151.5 times higher than the maximum value of traditional SiO 2 (3.8) insulators, and hence, it can be successfully used instead of insulators to store more electric charges or energy.