This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky structure with Ti:DLC interlayer for a wide temperature interval (80-470 K). In the related temperature interval, the ideality factor (n) and barrier height (Phi(Bo)) values changed from 6.95 to 2.28 and 0.19 to 0.87 eV, respectively. These temperature dependent n and Phi(Bo) values show that the CTM deviates significantly from the standard TE theory and that the barrier at the metal/semiconductor interface is not homogeneous. Additionally, the observed deviation from linearity of the Richardson plot (RP) at low temperatures and obtained very low Richardson constant (A*) at higher temperatures when compared to its theoretical value are other evidence of deviation from TE theory. The observed two separate linear in the Phi(Bo)-e/2kT plot reveal the Double-Gaussian distribution (DGD) corresponding low and moderate temperature intervals. The modified RP based on the GD of the BH gives a closer to the theoretical value of A* . Along with CTM analyses, the structure's series resistance (R-S) was estimated via both Ohm's law and Cheung functions. Finally, the Card-Rhoderick method was applied to achieve the variations of the interface trap density (D-it) depending on energy for each temperature by considering voltage-dependent n and Phi(B).