This work was focused primarily on the investigation of the parameters effecting the formation of beta-SiC and their crystallite diameter. Previous works revealed that the preparation of silica used as a precursor was the key factor on the resulting particle features. Therefore, the work aimed to achieve obtaining ultrafine silica precursor with superfine crystallites at relatively low temperatures. In the result, a clear difference was observed between the finally obtained SiC powders in terms of conversion and particle morphology according to the preparation process. The use of a modified high energy ball milling system resulted in a considerable reduction in the size of the starting particle's diameter (>100 nm). The FTIR transmission spectra of the yielded nanowires confirmed the SiC composition with the peak near 950 cm-1, which represents the LO stretching Si-C bond. The precursor preparation process improved the efficiency of Carbothermic Reduction and Carburization process used in the synthesis of SiC nanowires. The XRD findings indicated that all the precursors consisted of only amorphous silica, and the modified high energy ball milling system thermodynamically supported the crystal to amorphous conversion. The SEM micrographs revealed that the SiC nanowires had diameters of 50-100 nm with hundreds of microns in length. The SiC nanowire composed of ultrafine crystalline cubic SiC in beta form. As a result, the silica conversion to silicon carbide was successfully completed at a faster reduction rate and relative lower temperature (1475 degrees C for 4 h).