Abstract
1-[4-(prop-2-yn-1-yloxy) phenyl] ethanone-O-methacryloyloxime (POEMO) is a new methacrylic monomer with side chain alkyne. In this study, Ag/POEMO/p-Si Schottky metal-interlayer-semiconductor (MIS) diode was fabricated and its diode parameters were investigated. Using the forward bias current-voltage (I-V) characteristic, the ideality factor and barrier height of the MIS structure were found as 2.81 and 0.70 eV, respectively. The barrier height value of 0.70 eV obtained for Ag/POEMO/p-Si MIS diode was higher than the value of 0.64 of conventional Ag/p-Si Schottky diode. Cheung-Cheung and Norde methods were also used to extract ideality factor, barrier height and series resistance values, and the obtained results were compared.
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Kapsamı
Uluslararası
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Type
Hakemli
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Index info
WOS.SCI
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Language
English
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Article Type
None
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Keywords
Schottky diode electrical characterization methacrylic monomer